Fabrication of ultrahigh aspect ratio silicon nanostructures using self-assembled gold metal-assisted chemical etching
نویسندگان
چکیده
منابع مشابه
Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching.
Periodic high aspect ratio GaAs nanopillars with widths in the range of 500-1000 nm are produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates and Au catalyst films patterned with soft lithography. Depending on the etchant concentration and etching temperature, GaAs nanowires with either vertical or undulating sidewalls are formed with an etch rate of 1-2 μm/mi...
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ژورنال
عنوان ژورنال: Journal of Micro/Nanolithography, MEMS, and MOEMS
سال: 2017
ISSN: 1932-5150
DOI: 10.1117/1.jmm.16.1.014502